Electrode assembly made from Inconel
encapsulated dual zone 2x 2.25 kW heater
Platen diameter 240 mm
Electrode grounded in chamber
3 pin-lift design
Compatible with 3” – 8” wafers; carrier plates of 200 mm diameter
Temperature range: ambient to 700 °C
1 h to heat up from ambient to 700 °C
Temperature control under load is < +/- 3°C.
Temperature uniformity is < +/-3 °C for an 8” (200 mm) wafer.
Temperature uniformity is < +/-10 °C over 200 mm measured at atmosphere
and 700°C set point
APPLICATIONS
polySi (PE) CVD
SiGe (PE) CVD
high temperature SiO and SiN PECVD
Si Nanowire growth
C Nanotube growth
see also: 800° C high agility electrode |
Electrode: heat up /cool down |
