Electrode: heat up /cool down Ramp rates for heating
have been demonstrated as high as 130°C/minute
using our custom designed PBN plate based heater,
while conventional sintered ceramics are limited to
~15°C/minute

Plasma Cleaning
Oxygen Clean/Process 400°C Maximum Clean Temperature
Fluorine Clean/Process 400°C Maximum Clean Temperature

hot substrate table
(with thermocouples for temperature
uniformity measuements)

APPLICATIONS

polySi (PE) CVD
SiGe (PE) CVD
high temperature SiO and SiN PECVD
Si Nanowire growth
C Nanotube growth

AND !!
all standard low temperature PECVD processes:
SiO2, Si3N4, SiC, a - Si (TEOS at < 400° C)

-> DOWNLOAD the NANOFAB BROCHURE <-
(0.8 MB)

Control Range 200 – 800°C

Control Accuracy ± 1° C

Susceptor Temp Uniformity (@ 700°C)
100mm (4’’) ± 2.5°C
150mm (6’’) ± 4.5°C
200mm (8’’) ± 4.5°C

Thermal Ramping
0 - 600° C with 30° C/min, 600° C- 800° C with 15° C/min
800°C to 400°C for plasma clean ~ 24 minutes
800°C to 200°C for system vent ~ 60 minutes

This figure links the table temperature (as measured by the internal
control thermocouple) to the centre temperature of a 200mm silicon
under vacuum conditions. A thermocouple was bonded to the silicon wafer.
This data is provided only as a guide. The wafer temperature will vary
from this calibration with changes in: wafer flatness, chamber pressure,
chamber condition, wafer condition