The substrate temperature affects film density,
hydrogen content, breakdown voltage,
moisture resistance, stability.

BHF etch rate of SiO vs substrate electrode temperature
for a low and high deposition rate process

KOH etch rate of SiO vs substrate electrode temperature
for a low and high deposition rate process

OPT offers a 700° C substrate electrode
and a 800° C high agility substrate electrode.

A principal indication of film density is the wet etch rate in
either buffered hydrogen fluoride solution or KOH.

BHF etch rate of SiN vs substrate electrode temperature
for a low and high deposition rate process

KOH etch rate of SiN vs substrate electrode temperature
for a low and high deposition rate process