Sputter Rates

Etch Rates ( in Angstroem/ min) for various elements and compounds at

• Argon ion bombardment
• current density: 1 mA/ cm2
• normal incidence*

sputtering system:
Plasmalab System 400

ion beam system (etch or depostion):
Ionfab 300 Plus

processes:
sputter etching in parallel plate systems
ion beam sputter etching (ion milling)

* see   for angle dependences