Ion Beam Etching technology: IBE/ RIBE/ CAIBE

Ion Beam Deposition technology: IBS/ DIBS

RF sources with 13 MHz Generator and Automatch (AMU)

source diameters: 3, 15, 25 or 35 cm

PBN: filamentfree Plasma Bridge Neutraliser

substrate holder tiltable and rotating

optional: heater/ chiller for the substrate holder

System control: PLC (programmable logic controller) and PC 2000

Turbomolecular or Cryogenic pump with dual stage rotary as backing pump

high conductance pipework and gate valve

pressure reading: ion gauge for process and base pressure

gas pod with 6/ 12 MFC controlled gas lines (Mass Flow Controller)