III - V  Etching: GaAs, InP, II - VI

GaAs... Etching: RIE, ICP, RIBE

III/ V Heterostructure RIE Etching

III/ V Heterostructure ICP Etching

GaInP - Reactive Ion Etching (RIE)

AlInP - Reactive Ion Etching (RIE)

GaAs ICP Etching

GaAs via hole etching: ICP vs RIE

GaAs via hole and highly anisotropic RIE (Uni Duisburg)

GaAs/ AlGaAs Photonic Crystal ICP Etching (NCTU)

GaAs/ AlGaAs heterostructure VCSEL RIE

GaAs/ AlGaAs Heterostructure ICP Etching

GaAs/GaInP/AlInGaP Waveguide Etch

RIE of GaAs based grating structures for optoelectronic applications

GaAs/ AlGaAs DBR ICP Etching using Laser Interferometry

Low Damage GaAs gate recess ICP Etching

GaAs RIE and Si3N4 PECVD (TU Vienna)

GaAs quantum dot ICP RIE (Uni Glasgow)

GaAs ICP Etching by Gas Chopping (TU Vienna)

GaAs RIE: Quantum Dots and anisotropic "MO-RIE"(Cavendish Lab/ UK)

100 Ám deep anisotropic ICP Etching of GaAs (Siemens)

InGaAs/ GaAs ICP RIE: Low damage Etching (Siemens)

SiN ICP RIE: anisotropic low damage spacer etching on GaAs (HEMT)(Infineon)

GaAs Surface Roughening / Modification

GaAs/ AlGaAs CAIBE: laser mirrors (IBM Zuerich)

GaAs/ AlGaAs cleaved laser facet CAIBE

InGaAs/ AlGaAs Lasers: CAIBE with laser interferometry(Chalmers Uni Goeteborg)

GaAs/ AlGaAs Heterostructures: RIBE, CAIBE (Chalmers Uni Goeteborg)

GaInAsP/InP CAIBE for Photonic Bandgap Devices (HHI Berlin)

InP/ InGaAsP CAIBE: low loss mirrors (NRC Ottawa)

InGaAs/ InP CAIBE: deep undercut mesas NRC Ottawa)

GaAs RIBE / CAIBE: Microdivergence (Sandia US)

GaP Lens Etching by ICP

80 Ám Deep GaP ICP Etching

GaP/(AlxGa1-x))0.5In0.5P/AlGaAs/GaAs- RIE with 70° walls (Uni Kassel)

InP...  Etching: RIE, ICP, RIBE

InP DFB Laser RIE Etching

InP Waveguide RIE Etching

InP Via Hole RIE Etching

InP Lens etching by RIE and ICP

InP ICP Etching

InP ICP Etching by CH4/H2 (HHI)

InP ICP Etching for Photonic Crystals (ETH Zuerich)

ICP-Etching of InP/InGaAsP for photonic integrated circuits (TU Eindhoven)

Cl2 based InP ICP Etching (Uni Duisburg)

InP/ InGaAsP Laser Facet ICP Etching

InP/ InGaAsP Waveguide ICP Etching

InGaAlP  ICP Etching

InP/ InGaAsP ICP RIE: Low damage, anisotropic Etching (Infineon)

GaN ICP Etching

AlGaN/ GaN ICP Etching

InGaN/ GaN ICP Etching

GaN 90░ Walls etched by ICP (Infineon)

GaN RIE (TU Eindhoven)

GaN RIE with smooth walls (Infineon)

GaN Nanorod ICP Etching (Uni Bath)

InSb and InSbAs ICP Etching

InAs/ AlSb ICP Etching

AlInSb ICP etching for IR Detectors

GaSb ICP Etching

ZnSe RIE: < 100 nm lines and dots (Uni Linz)

ZnS RIE Etching

ZnO ICP Etching

 

Si, SiO2, SiN, Al Etching

Si Etching: overview

Isotropic Si Etching

Photonic Crystals Etching in Si

Black Si by Dry Etching (X Fab)

Si Etching: room temperature ICP for MEMS ("Bosch process")

High Aspect Ratio Si Etching (Bosch Process for MEMS)

High Rate Bosch Process by ICP Accelerator

Estrelas for deep Si Etching

"ARDE": Aspect Ratio Dependent Etching

Si Cylinder etched by Gas Chopping (Uni Kassel)

Si ICP Etching for SOI technology

Bosch process: notching reduction (TU Vienna)

Bosch Process Optimisation Options

Si Etching for MEMS

Si Waveguide ICP etching

Cryo ICP: Deep Si Etching for MEMS (TU Twente)

400 Ám deep Si etching by cryo technology (American University of Cairo)

Deep Si Etching by Cryo ICP

Sub 20 nm cryo ICP Etching (with Lawrence Berkeley National laboratory)

Cryo ICP Si etching with LF (kHz) (with Lawrence Berkeley National laboratory)

Deep Si Etching by Cryo ICP: Profile Control (LBNL)

Single step deep Si etching at low temperatures (UCSD)

Deep Si Etching using a Ga implanted and a Al2O3 mask (Caltech)

Buried Micro Channels in Si (TU Twente)

Deep Si ICP Etching (Uni Kassel)

ultrasharp Si tips by ICP etching for field emission arrays (Uni Kassel)

Deep Si Etching for MEMS and Si tips (Bosch Process)(WTC)

Si ICP Etching for AFM microscopy (Uni Kassel)

Si AFM peak RIE (Uni Kassel)

Si Needles

Si cones and pillars dry etching (RIE)(Uni Birmingham)

Si RIE for MEMS (Sacros Utah)

Si Lens etch by ICP

Si RIE: Lenses etched in Si (Uni Erlangen)

ICP Si etching: 50 nm lines and spaces

100 nm gratings etched in Si at 10 : 1 aspect ratio

Anisotropic Si RIE for a vertical MOSFET (Uni Bochum)

Cryo cooling: Deep Si Etching (RIE)

SiO2 PECVD and Si ICP RIE for DWDM (Optolink)

Anisotropic Si RIE by Sidewall Passivation

polySi ICP - RIE

polySi RIE Etching of 25 nm lines (Uni Dortmund)

Nanoimprint template etching in Si (AMO, Bessy)

Nanoscale Si Etching by Gas Chopping (Lawrence Berkeley)

Si / SiGe RIE: anisotropic Etch with Laser Interferometry (Uni Bochum/ RWTH Aachen)

Ge Nanoscale and deep Dry Etching (KTH Stockholm)

Smooth SiO2-Si stack ICP etching

SiO2 Etching: RIE, ICP, RIBE

SiO2 via hole etching

Quartz RIE

SiO2/ TiO2 Multilayer RIE

Deep SiO2 Waveguide Etching by ICP

0.15 Ám SiO2 ICP etching

Grey Scale Lithography: fused Silica etching

Deep Quartz Etching by ICP

Astrea for etching of thick quartz substrates

SiO2 Lens Etching

SiO2 RIE:   200 nm lines at 5 : 1 aspect ratio

Nanoimprint template etching in SiO2 (AMO)

Photonic Crystal Hole Etching in SiO2

SiO2 PECVD and RIE: waveguides (Uni Dortmund)

Glass (Borofloat) Dry Etching

SiN ICP RIE: anisotropic low damage spacer etching on GaAs (HEMT)(Infineon)

Deep Si3N4 Etching

SiN Reactive Ion Etching

SiN Etching for Photonic Crystals

Si3N4 PECVD and RIE on platinized silicon pyramides

SiC Reactive Ion Etching (RIE)

High Rate SiC Etching (RWTH Aachen)

SiC via hole ICP etching

Anisotropic TiN Etching (Uni Bochum, AMO)

Al ICP Etching

Al RIE: 0.5 Ám lines  (ITE Warszawa)

Etching processes for Failure Analysis

Failure Analysis/ Reverse Engineering (Infineon)

Failure Analysis with Cu metalisation (Infineon)

Plasma accelerator for failure anylysis die etching

Polyimide Etching (RIE) for Failure Analysis

Cu Etching for Failure Analysis

Fotoimide and SiN etching for failure analysis using laser interferometry

Low Damage, anisotropic SiO2 ICP etch for Failure Analysis

 

ALE Atomic Layer Etching

Si ALE Atomic Layer Etching [22.10.2016]

Atomic Layer etching of 2d MoS2 [10.05.2017]

 

Organics Etching

Etching of organics: RIE, ECR, ICP, RIBE

Thick Photoresist Etching for the "trilevel technique"

Tri-layer resist scheme for nano-silicon etching (Uni Birmingham)

0.1 Ám Photoresist ICP - RIE: 100 nm lines and spaces

Photoresist RIBE: Reactive Ion Beam Etching  (FhG Berlin)

Photoresist RIE: Anisotropic Etching  of 0.3 Ám lines (PSI Zuerich)

Deep anisotropic Polyimide ICP Etching

SU-8 Dry Etching

Single wafer photoresist Stripping

Dry Development of Silylated Resist

BCB ICP Etching (FhG Freiburg IAF)

Polydimethylsiloxane (PDMS) Dry Etching

LIGA technique: deep anisotropic PMMA RIE (FZ Karlsruhe)

Gas Chopping: Anisotropic Polyimide Etching  (Uni Kassel)

Fotoimide and SiN etching for failure analysis using laser interferometry

Deep, anisotropic Diamond Etching (ICP and RIE)

 

Other Etching processes

PZT Etching

Anisotropic TiN Etching (Uni Bochum, AMO)

Sputter Etching in "RIE" or "ICP": Au, Pt, Ni

Sapphire (Al2O3) ICP Etching

Sapphire (Al2O3) Lens Etching

VO2 Dry Etching

GST Dry Etching (Germanium Antimony Telluride )

Langasite ICP Etching

Mo Etching

W ICP Etching

WSix ICP Etching

Ti Dry Etching

Tilted TiO2 Etching by RIE

Ta ICP Etching

Ta2O5 ICP Etching

Nb Etching (RIE, ICP)

Etching processes for Mask Manufacturing

Cr Etching

Etching processes for Failure Analysis

Cu Etching for Failure Analysis

PbSe RIE Etching

LiTaO3 Dry Etching

LiNbO3 Dry Etching

ITO Reactive Ion Etching (ICP RIE)

HgCdTe (CMT) Low Energy ICP Etching

Bi2Te3 ICP Etching

 

Plasma Deposition: PECVD

PECVD of dielectric films (SiOx, SiNx)

SiO2 PECVD

TEOS SiO2 PECVD Deposition (Uni Stuttgart)

TEOS SiO2 ICP PECVD Deposition

BPSG PECVD for Planarisation

SiO2 ICP PECVD: very high quality conformal deposition (RWTH Aachen)

SiO2 PECVD and RIE: waveguides (Uni Dortmund)

Ge doped SiO2 PECVD for Waveguides

High Rate SiO2 PECVD for waveguides

SiN/ SiO Distributed Bragg Reflectors by PECVD (Uni Kassel)

SiN/ SiO and Si/ SiO Bragg Reflectors by low temperature PECVD (Uni Leipzig)

Si/ SiO2 Multiple Quantum Wells by ICP remote PECVD (RWTH Aachen)

SiO2 PECVD and Si ICP RIE for DWDM (Optolink)

Low Temperature SiO2 ICP - PECVD

Low Temperature SiN ICP - PECVD (Uni Glasgow)

ICP PECVD of SiO and SiN for DBRs (TU Darmstadt)

ICP - PECVD: SiN

PECVD of stress controlled SiNxfor membranes (Sensitec Wetzlar)

Stress Control for Si3N4 and SiO2 PECVD

SiN Conformal PECVD

SiN PECVD for solar cell passivation

NH3 free PECVD of SiN

Low Temperature SiN PECVD for lift off technology (TU Dresden)

Si3N4 PECVD and GaAs RIE (TU Wien)

Amorphous Si PECVD

µc Si PECVD Deposition

polySi deposition (LPCVD)

SiGe PECVD and CVD

SiC PECVD

Very high rate PECVD

Al2O3 PECVD

ALD system for pulsed flow Al2O3 ICP - PECVD (TU Eindhoven)

TiO2 ICP PECVD

DLC PECVD

DLC PECVD by ICP for Si tip field emission arrays (Uni Kassel)

Diamond Deposition by HPM - PECVD

Si Nanowire Growth

Si Nanowire Growth with In catalyst (IMEC)

C Nanotube Growth

C Nanotube Growth for Microelectronics (IMEC)

CNT Growth and Pt ALD in one cluster

ZnO Nanorod Growth

Graphene Growth

hexagonal BN Growth

MoS2 Growth

 

Atomic Layer Deposition: ALD

TiN ALD (radical assisted by remote plasma)

TiO2 ALD (radical assisted by remote plasma) (Uni Jena)

TiO2 ALD growth using Ozone (TU Eindhoven)

TaN / Ta3N5 ALD by remote plasma

Ta2O5 radical assisted ALD

WN ALD by remote plasma

HfO2 remote plasma ALD for ReRAM cells (FZ Juelich)

HfO2 ALD (radical assisted by remote plasma)

HfO2 ALD (thermal only)

Al2O3 ALD (radical assisted by remote plasma)

Al2O3 remote plasma ALD for solar cell passivation (TU Eindhoven)

ALD system for pulsed flow Al2O3 ICP - PECVD (TU Eindhoven)

Al2O3 ALD growth using Ozone (TU Eindhoven)

Al2O3 ALD (thermal only)

SrTiO3 (STO) ALD (radical assisted by remote plasma) (TU Eindhoven)

HfN ALD (radical assisted by remote plasma)

ZnO ALD (thermal only)

Al doped ZnO ALD (TU Eindhoven)

Al doped ZnO ALD (TU Eindhoven)

MgF2 ALD for optical applications (Jet Propulsion Lab)

Pt ALD (thermal and radical assisted by remote plasma)

Atomic Layer Deposition (ALD) for decoration in failure analysis

Pd growth by remote plasma ALD (TU Eindhoven)

CNT Growth and Pt ALD in one cluster

NbN PE ALD for gate electrodes (Fraunhofer IISB Erlangen)

SiO2 ALD (radical assisted by remote plasma)

SiNx ALD (radical assisted by remote plasma)

AlN ALD ALD (radical assisted by remote plasma)

La2O3 ALD (radical assisted by remote plasma)

Gd2O3 ALD (radical assisted by remote plasma)

GdN ALD (radical assisted by remote plasma) (Uni Liverpool)

In2O3 growth by thermal ALD (TU Eindhoven)

ALD with bias

ALD for Nanopatterning (LBNL)

GaN ALD (radical assisted by remote plasma)

 

Ion Beam Etch Processes

LiNbO3 Reactive Ion Beam Etching (RIBE/ CAIBE)

Ion Beam Etching of Pt

Ion Beam Etching of Au

MRAM Ion Beam Etching (IBE)

Ion Beam Etching of Ni, NiCr

Sputter Etching of Metals: IBE, "RIE"

Blazed Gratings by Ion Beam Etching (IBE)

Photoresist RIBE: Reactive Ion Beam Etching  (FhG Berlin)

CAIBE of SiO2 (and Cr IBS) (OPT, Uni Jena)

High Aspect Ratio Quartz RIBE (and Cr IBS) (Uni Jena)

SiO2 RIBE: blazed gratings (Uni Jena)

Cr IBE and Polymer RIBE using Optical Emission EPD (Uni Jena)

YBCO IBE: low energy HTS ion beam etching  (FhG Berlin)

HgCdTe (CMT) IBE

GaAs/ AlGaAs CAIBE for laser mirrors (IBM Zuerich)

GaAs/ AlGaAs cleaved laser facet CAIBE

InP/ InGaAsP CAIBE: low loss mirrors (NRC Ottawa)

InGaAs/ InP CAIBE: deep undercut mesas (NRC Ottawa)

InGaAs/ AlGaAs Lasers: CAIBE with laser interferometry (Chalmers Uni Goeteborg)

GaAs/ AlGaAs Heterostructures: RIBE, CAIBE (Chalmers Uni Goeteborg)

GaInAsP/InP CAIBE for Photonic Bandgap Devices (HHI Berlin)

GaAs RIBE / CAIBE: Microdivergence (Sandia US)

 

Ion Beam Deposition Processes

DLC ion beam deposition

High Quality Optical Coatings: SiO2, TiO2, Ta2O5

Laser Bar Facet Coating (IBS): mirrors and ARC

High Quality Mirror Coatings (Ionfab 500 Plus)

DWDM: Ion Beam Deposition

Dual Wavelength Anti-Reflection Coating

Ion Beam Deposition (Ionfab 300 Plus): SiO2, Ta2O5, Al2O3

Ion Beam Deposition of SiO2

Ion Beam Deposition of TiO2

Ion Beam Deposition of Ta2O5

Ion Beam Deposition of Al2O3

Ion Beam Deposition of Si

Ion Beam Deposition of Cr

UV mirror by IBS HfO2/SiO2

Ion Beam Deposition of VaO(5-x)

 

Sputter deposition

Sputter Depostion

Al Sputter Depostion with excellent step coverage

Ti Magnetron Sputter Deposition

TiN Magnetron Sputter Deposition

Metal Sputtering for Lift-Off

Si pulsed DC magnetron sputtering

ITO Magnetron Sputtering

Mo Magnetron Sputter Deposition

Cu Magnetron Sputter Deposition

 

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