GaAs... Etching: RIE, ICP, RIBE
III/ V Heterostructure RIE Etching
III/ V Heterostructure ICP Etching
GaInP - Reactive Ion Etching (RIE)
AlInP - Reactive Ion Etching (RIE)
GaAs via hole etching: ICP vs RIE
GaAs via hole and highly anisotropic RIE (Uni Duisburg)
GaAs/ AlGaAs Photonic Crystal ICP Etching (NCTU)
GaAs/ AlGaAs heterostructure VCSEL RIE
GaAs/ AlGaAs Heterostructure ICP Etching
GaAs/GaInP/AlInGaP Waveguide Etch
RIE of GaAs based grating structures for optoelectronic applications
GaAs/ AlGaAs DBR ICP Etching using Laser Interferometry
Low Damage GaAs gate recess ICP Etching
GaAs RIE and Si3N4 PECVD (TU Vienna)
GaAs quantum dot ICP RIE (Uni Glasgow)
GaAs ICP Etching by Gas Chopping (TU Vienna)
GaAs RIE: Quantum Dots and anisotropic "MO-RIE"(Cavendish Lab/ UK)
100 µm deep anisotropic ICP Etching of GaAs (Siemens)
InGaAs/ GaAs ICP RIE: Low damage Etching (Siemens)
SiN ICP RIE: anisotropic low damage spacer etching on GaAs (HEMT)(Infineon)
GaAs Surface Roughening / Modification
GaAs/ AlGaAs CAIBE: laser mirrors (IBM Zuerich)
GaAs/ AlGaAs cleaved laser facet CAIBE
InGaAs/ AlGaAs Lasers: CAIBE with laser interferometry(Chalmers Uni Goeteborg)
GaAs/ AlGaAs Heterostructures: RIBE, CAIBE (Chalmers Uni Goeteborg)
GaInAsP/InP CAIBE for Photonic Bandgap Devices (HHI Berlin)
InP/ InGaAsP CAIBE: low loss mirrors (NRC Ottawa)
InGaAs/ InP CAIBE: deep undercut mesas NRC Ottawa)
GaAs RIBE / CAIBE: Microdivergence (Sandia US)
GaP/(AlxGa1-x))0.5In0.5P/AlGaAs/GaAs- RIE with 70° walls (Uni Kassel)
InP... Etching: RIE, ICP, RIBE
InP Lens etching by RIE and ICP
InP ICP Etching for Photonic Crystals (ETH Zuerich)
Cl2 based InP ICP Etching (Uni Duisburg)
InP/ InGaAsP Laser Facet ICP Etching
InP/ InGaAsP Waveguide ICP Etching
InP/ InGaAsP ICP RIE: Low damage, anisotropic Etching (Infineon)
GaN 90° Walls etched by ICP (Infineon)
GaN RIE with smooth walls (Infineon)
ZnSe RIE: < 100 nm lines and dots (Uni Linz)
Photonic Crystals Etching in Si
Black Si by Dry Etching (X Fab)
Si Etching: room temperature ICP for MEMS ("Bosch process")
High Rate Bosch Process by ICP Accelerator
"ARDE": Aspect Ratio Dependent Etching
Si Cylinder etched by Gas Chopping (Uni Kassel)
Si ICP Etching for SOI technology
Bosch process: notching reduction (TU Vienna)
Bosch Process Optimisation Options
Cryo ICP: Deep Si Etching for MEMS (TU Twente)
Single step deep Si etching at low temperatures (UCSD)
Buried Micro Channels in Si (TU Twente)
Deep Si ICP Etching (Uni Kassel)
ultrasharp Si tips by ICP etching for field emission arrays (Uni Kassel)
Deep Si Etching for MEMS and Si tips (Bosch Process)(WTC)
Si ICP Etching for AFM microscopy (Uni Kassel)
Si cones and pillars dry etching (RIE)(Uni Birmingham)
Si RIE: Lenses etched in Si (Uni Erlangen)
ICP Si etching: 50 nm lines and spaces
100 nm gratings etched in Si at 10 : 1 aspect ratio
Anisotropic Si RIE for a vertical MOSFET (Uni Bochum)
Cryo cooling: Deep Si Etching (RIE)
SiO2 PECVD and Si ICP RIE for DWDM (Optolink)
Anisotropic Si RIE by Sidewall Passivation
polySi RIE Etching of 25 nm lines (Uni Dortmund)
Nanoimprint template etching in Si (AMO, Bessy)
Nanoscale Si Etching by Gas Chopping (Lawrence Berkeley)
Si / SiGe RIE: anisotropic Etch with Laser Interferometry (Uni Bochum/ RWTH Aachen)
Deep SiO2 Waveguide Etching by ICP
Grey Scale Lithography: fused Silica etching
SiO2 RIE: 200 nm lines at 5 : 1 aspect ratio
Nanoimprint template etching in SiO2 (AMO)
Photonic Crystal Hole Etching in SiO2
SiO2 PECVD and RIE: waveguides (Uni Dortmund)
SiN ICP RIE: anisotropic low damage spacer etching on GaAs (HEMT)(Infineon)
SiN Etching for Photonic Crystals
Si3N4 PECVD and RIE on platinized silicon pyramides
SiC Reactive Ion Etching (RIE)
High Rate SiC Etching (RWTH Aachen)
Anisotropic TiN Etching (Uni Bochum, AMO)
Al RIE: 0.5 µm lines (ITE Warszawa)
Etching processes for Failure Analysis
Failure Analysis/ Reverse Engineering (Infineon)
Failure Analysis with Cu metalisation (Infineon)
Plasma accelerator for failure anylysis die etching
Polyimide Etching (RIE) for Failure Analysis
Cu Etching for Failure Analysis
Fotoimide and SiN etching for failure analysis using laser interferometry
Low Damage, anisotropic SiO2 ICP etch for Failure Analysis
Etching of organics: RIE, ECR, ICP, RIBE
Thick Photoresist Etching for the "trilevel technique"
0.1 µm Photoresist ICP - RIE: 100 nm lines and spaces
Photoresist RIBE: Reactive Ion Beam Etching (FhG Berlin)
Photoresist RIE: Anisotropic Etching of 0.3 µm lines (PSI Zuerich)
Deep anisotropic Polyimide ICP Etching
Single wafer photoresist Stripping
Dry Development of Silylated Resist
BCB ICP Etching (FhG Freiburg IAF)
LIGA technique: deep anisotropic PMMA RIE (FZ Karlsruhe)
Gas Chopping: Anisotropic Polyimide Etching (Uni Kassel)
Fotoimide and SiN etching for failure analysis using laser interferometry
Deep, anisotropic Diamond Etching (ICP and RIE)
Anisotropic TiN Etching (Uni Bochum, AMO)
Sputter Etching in "RIE" or "ICP": Au, Pt, Ni
Etching processes for Mask Manufacturing
Etching processes for Failure Analysis
Cu Etching for Failure Analysis
ITO Reactive Ion Etching (ICP RIE)
HgCdTe (CMT) Low Energy ICP Etching
PECVD of dielectric films (SiOx, SiNx)
TEOS SiO2 PECVD Deposition (Uni Stuttgart)
SiO2 ICP PECVD: very high quality conformal deposition (RWTH Aachen)
SiO2 PECVD and RIE: waveguides (Uni Dortmund)
Ge doped SiO2 PECVD for Waveguides
High Rate SiO2 PECVD for waveguides
SiN/ SiO Distributed Bragg Reflectors by PECVD (Uni Kassel)
SiN/ SiO and Si/ SiO Bragg Reflectors by low temperature PECVD (Uni Leipzig)
Si/ SiO2 Multiple Quantum Wells by ICP remote PECVD (RWTH Aachen)
SiO2 PECVD and Si ICP RIE for DWDM (Optolink)
Low Temperature SiO2 ICP - PECVD
Low Temperature SiN ICP - PECVD (Uni Glasgow)
PECVD of stress controlled SiNxfor membranes (Sensitec Wetzlar)
Stress Control for Si3N4 and SiO2 PECVD
SiN PECVD for solar cell passivation
Low Temperature SiN PECVD for lift off technology TU Dresden)
Si3N4 PECVD and GaAs RIE (TU Wien)
DLC PECVD by ICP for Si tip field emission arrays (Uni Kassel)
Diamond Deposition by HPM - PECVD
Si Nanowire Growth with In catalyst (IMEC)
C Nanotube Growth for Microelectronics (IMEC)
TiN ALD (radical assisted by remote plasma)
TiO2 ALD (radical assisted by remote plasma)
HfO2 ALD (radical assisted by remote plasma)
Al2O3 ALD (radical assisted by remote plasma)
Al2O3 remote plasma ALD for solar cell passivation (TU Eindhoven)
HfN ALD (radical assisted by remote plasma)
Ru ALD ALD (radical assisted by remote plasma)
SiO2 ALD (radical assisted by remote plasma)
SiNx ALD (radical assisted by remote plasma)
AlN ALD ALD (radical assisted by remote plasma)
La2O3 ALD (radical assisted by remote plasma)
LiNbO3 Reactive Ion Beam Etching (RIBE/ CAIBE)
Sputter Etching of Metals: IBE, "RIE"
Blazed Gratings by Ion Beam Etching (IBE)
Photoresist RIBE: Reactive Ion Beam Etching (FhG Berlin)
CAIBE of SiO2 (and Cr IBS) (OPT, Uni Jena)
High Aspect Ratio Quartz RIBE (and Cr IBS) (Uni Jena)
SiO2 RIBE: blazed gratings (Uni Jena)
YBCO IBE: low energy HTS ion beam etching (FhG Berlin)
GaAs/ AlGaAs CAIBE for laser mirrors (IBM Zuerich)
GaAs/ AlGaAs cleaved laser facet CAIBE
InP/ InGaAsP CAIBE: low loss mirrors (NRC Ottawa)
InGaAs/ InP CAIBE: deep undercut mesas (NRC Ottawa)
InGaAs/ AlGaAs Lasers: CAIBE with laser interferometry (Chalmers Uni Goeteborg)
GaAs/ AlGaAs Heterostructures: RIBE, CAIBE (Chalmers Uni Goeteborg)
GaInAsP/InP CAIBE for Photonic Bandgap Devices (HHI Berlin)
GaAs RIBE / CAIBE: Microdivergence (Sandia US)
High Quality Optical Coatings: SiO2, TiO2, Ta2O5
Laser Bar Facet Coating (IBS): mirrors and ARC
High Quality Mirror Coatings (Ionfab 500 Plus)
Dual Wavelength Anti-Reflection Coating
Ion Beam Deposition (Ionfab 300 Plus): SiO2, Ta2O5, Al2O3
Ion Beam Deposition of VaO(5-x)
Al Sputter Depostion with excellent step coverage