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OPT application lab:
1.5 µm deep Al/Si etch
(PR mask in place)
Equipment:
Plasmalab 80 Plus
Plasmalab System 100
Plasmalab System 133
Technology:
Parallel Plate Configuration
RIE-Mode ( 13.56 MHz)
3 Step Cl-Process:
(i) High Bias Al2O3 Breakthrough
(ii) Anisotropic Bulk Etch
(iii) High Selectivity Overetch
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0.2 µm Al lines
with kind permission of:
Institute of Electron Technology
Dr Piotr Grabiec
Warszawa
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The SEM shows 0.2 and 0.5 µm wide Al lines (photoresist not removed)
rate: 0.1 µm/ min
Selectivity to the Photoresist Mask: 3 : 1
Selectivity to underlying SiO2: 12 : 1
Uniformity < ± 5 %
optical emission for end point detection:
intensity vs etch time
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