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-> optical emission end point detection
ICP sources
ICP 65 for pieces and small wafer
ICP 180 for up to 4" wafers
ICP 380 for up to 8" wafers
Results:
Rate : 0.4 µm/ min
high selectivity to SiO2 underneath
selectivity to photoresist mask > 3 : 1
linewidth loss < 0.05 µm/ side
in passivation / resist strip |
OPT application lab:
anisotropic Al etch little linewidth loss |
Equipment:
Plasmalab System 80 Plus
Plasmalab System 100/ 133 (Cluster)
Technology:
Reactive Ion Etching
with ICP Source (13.56 MHz)
Inductive Coupled Plasma
RF driven substrate electrode
substrate temperature control
HBr, Cl2 based multi step process
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