OPT application lab:
8 µm deep etch

laser endpoint scan from GaN etch

OPT application lab:
10 µm deep AlGaN/ GaN etch

Plasmalab System 100:
dual chamber cluster: ICP / RIE

ICP schematic

Reactive Ion Etching
with ICP Source (2 or 13.56 MHz)
Inductive Coupled Plasma
13.56 MHz Plasma Excitation
Process chemistry: Cl based
RF driven substrate electrode

rate: 0.5 - 1 µm/ min with SiO2 mask
0.3 µm/ min with photoresist mask
selectivity to SiO2 5 - 10 : 1
to PR 1.15 : 1
anisotropic profile
clean etch surface
low ion induced damage