1 µm AlInP etched with CH₄

RIE layout

4 µm AlInP etched with SiCl₄

Plasmalab System 133
with loadlock

Plasmalab 80 Plus
with Glove box

Plasmalab 80 Plus
Plasmalab System 100/ 133

Technology:
Parallel Plate Configuration
RIE-Mode (13.56 MHz)
Shower Head Gas Inlet

Results:
Rate :ca. 2 (CH4) - 25 (SiCl4) nm/ min
Mask: Photoresist or SiO2
60° - 85° walls (depending on mask)
smoother walls by SiCl4