a Si can be deposited by:


parallel plate PECVD
(13 MHz/ 81 MHz)

a Si can also be deposited by
"remote plasma" PECVD.

The "remote" plasma only
cracks the molecules in a region
"remote" from the substrate.

Equipment:
Plasmalab 80 Plus/ 800 Plus
Plasmalab System 100/ 133

Technology:
Parallel Plate Reactor
Shower Head Gas inlet
SiH₄ based process (PH₃ , B₂H₆ for doping)

Results:
Rate : 5- 25 nm/min
Uniformity: +/- 3 - 4 %
Reproducibility: +/- 2.5 %

good Si carrier lifetime data of
~2-2.5 ms down to 12 nm film thickness


i - a Si:H dark conductivity < 10^-9 S/ cm

System 100 Pro
Square or hexagonal transfer station
with up to 3 or 5 process modules
(PECVD, TCO Sputtering, ALD)