10 µm BPSG after PECVD

10 µm BPSG after single step anneal (950 °C)

Plasmalab System 100
with vacuum loadlock

SiO2 PECVD with B and P doping for “planarisation”
Annealing at 950 °C. The approximate position of 6 micron
high waveguide cores are indicated by black squares
in the top SEMs.

10 micron SiO2 were deposited in a single step followed
by a single anneal step. Further impovements can be
achieved by multiple deposition/ anneal steps.

Gap between cores:

6 micron (top SEMs)
2 micron (center SEMs)
4 micron (lower SEMs)

SEMs left hand side: before anneal
SEMs right hand side:
after (single step) anneal

PECVD technology