OPT application lab:
8 µm deep CMT etch
PR mask still in place
controllable profile

Inductive Coupled Plasma

Technology:
Inductive Coupled Plasma ICP - RIE
Very efficient substrate cooling

Results:
rate 0.05 to 0.5 µ/ min
very low bias / damage process
selectivity > 10:1 to resist
                 > 20:1 to SiO2 or SiNx
uniformity < +/- 4 % (50mm diameter)
excellent profile control

3.5 µm deep anisotropic, low damage etch

4 µm deep anisotropic, low damage etch

Plasmalab 80 Plus
with cover for the ICP65

Plasmalab System 100:
(cluster with ICP and RIE)