110 nm Cr etched at 20 nm/ min
selectivity to Shipley S1800 serie > 1.5 : 1
Courtesy of University of Joensuu
Department of Physics and Mathematics

500 nm diameter holes
anisotropic etch of 100 nm wide,
150 nm thick Cr lines
ZEP mask still in place
7 nm/ min at 0.5 : 1 to the mask
Courtesy of MPI Halle
Dr Milenin, Dr Jamios

Plasmalab System 133
with vacuum loadlock

Plasmalab System 100/ 133
Plasmalab 80 Plus

13.56 MHz Plasma Excitation
Chlorine based Process
Parallel Plate Reactor
Shower Head Gas Inlet

Rate: ca 2 - 30 nm/ min
Selectivity to PR: 0.5 - 1.5 : 1
Profile : adjustable
wall angle definition by photoresist erosion

RIE layout

6 µm diameter dots
anisotropic etch of 500 nm Cr
AR-P 351 mask still in place
12 nm/ min at 1: 1.2 to the mask
Courtesy of MPI Halle, Dr Milenin and Dr Jamois