OPT application lab:
residue free Cu etch

Reactive Ion Etching

Plasmalab System 100
with loadlock, RIE mode

Equipment:

Plasmalab 80 Plus
Plasmalab System 100
(configured for Cu RIE)

Technology:

Parallel Plate Reactor
Shower Head Gas inlet
Chlorine based process

Results:

rate : 300 nm/min (chip)

uniformity: +  5% (200 mm wafer)

residue free etch

selectivity to SiO₂  >  10 : 1