OPT application lab:
DLC deposition in a parallel plate system

excellent passivation for high voltage devices due to its high breakdown voltage (> 1.750 Volt for 120 nm), low leakage and hard surface properties

Plasmalab 80 Plus

HR-TEM picture, 200kV, elastically filtered
taken by TU Chemnitz, showing the interface
of a 200 nm amoprhous DLC film deposited
on a Si wafer at the OPT application lab

Cassette to Cassette Cluster System
for Production (passivating power devices)

Parallel Plate Reactor

DLC stands for "diamond like carbon". It is used as a protective coating and for very high quality electrical passivations layers.

-  good adhesion on Si, polymers, SiO₂
-  rate: 15 - 50 nm/ min
-  uniformity per wafer: ± 3/ 5 % (4/ 6")
-  low deposition temperature
-  refractive index 2.4
-  high electrical breakdown field
-  dielectric constant approx. 8
-  semiconducting devices become radiation hard
-  doping with nitrogen or boron possible
-  thermal conductivity variable, up to 700W/m-K
-  Moh hardness: 9
-  Vickers microhardness 2000-5000 kg/mm2