Plasma Technology  


Courtesy of Infineon Munich:
0.2 µm Cu technology: M1 - M4 etched

Reactive Ion Etching

Plasmalab 80 Plus
with laser interferometer

Failure Analysis with Cu metalisation, Si3N4 and SiO2 RIE etching


Plasmalab 80 Plus for chips and up to 200 mm wafer
Plasmalab 800 Plus for chips and up to 300 mm wafer
Plasmalab System 100/ 133

Parallel Plate Reactor
Shower Head Gas inlet
Fluorine based process


rate : ca 40 nm/min (chip)
residue free etch

Good uniformities over 200/ 300 mm wafers can be achieved.

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