OPT application lab: DBR Heterostuctures
6 µm deep anisotropic GaAs/ AlGaAs Etch

Plasmalab System 100
with ICP180 source

OPT application lab:
3 µm deep etch with sloped wall
very smooth sidewalls

OPT application lab:
sloped wall 10 µm deep
GaAs/ AlGaAs Etch

Heterostructures: 0.3 - 1 µm/ min

selectivity to PR Mask > 3 : 1,
to SiO₂ > 10 : 1
(for high rate anisotropic etching)

low bias process for low substrate damage

profile controllable for sloped walls: 55 - 75 °
selectivity to PR: 5 - 10 : 1 at > 100 nm/ min