Dr Franz uses his Plasmalab System 90 (replaced by the Plasmalab System 100 as shown) with a dual magnet ECR source and the Plasmalab System 90 Plus in RIE configuration for highly anisotropic as well as low damage etching of 3/5's. The ICP technology has replaced the ECR technology in 1994 - 1997. see ICP vs ECR

with kind permission of:
  Siemens Munich, ZT KM 4
  Dr G Franz

Plasmalab System 100
with ICP 380 source

ICP technology

GaAs ICP RIE*

The SEM shows a 95 µm deep etch

Trilevel Resist mask (not removed)

rate: > 1 µm/ min

Uniformity  < ± 1  % (2")