GaAs Etching

  

RIE

Chlorine based process

etch rates: 10 nm/ min - >1 µm/ min

high selectivity to AlGaAs by F addition

low selectivity for heterostructures

GaAs/ AlGaAs heterostructure RIE

Courtesy of Siemens
3 µm deep anisotropic GaAs/ AlGaAs RIE

100 µm deep GaAs via hole

OPT Application lab:
100 µm deep GaAs RIE at 1 µm/ min

ICP - RIE

Chlorine based process

etch rates: 10 nm/ min -  >3 µm/ min

low damage by low ion energies

anisotropic etch though heterostructures

20 µm deep anisotropic ICP GaAs etch

OPT Application lab:
50 µm deep GaAs via hole

5 µm deep heterostruture ICP etch

OPT Application lab:
5 µm deep GaAs/ AlGaAs ICP etch

CAIBE

Ar or Ar/ Cl2 through the RF source

etch rates: 10 nm/ min - 300nm/min

anisotropic etch though heterostructures

mirror quality

GaAs/ ALGaAs Heterostucrue CAIBE, wall angle 45°

OPT Application lab:
Heterostructure CAIBE at 45° angle

GaAs RIBE at low microdivergence

Courtesy of Sandia:
1.2 µm deep GaAs RIBE
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