OPT application lab: DBR Heterostuctures
10 µm deep anisotropic GaAs Etch

Plasmalab System 100
with ICP180 source

OPT application lab:
sloped wall 10 µm deep
GaAs Etch

rate GaAs up to 2 µm/ min

selectivity to PR Mask 30 - >100 : 1,
to SiO2 50 - >200 : 1

low bias process or low substrate damage