GaAs based 220 nm pitch gratings
formed by RIE using a photoresist mask (removed)
(OPT Applications Laboratory)

RIE technology

Equipment:
Plasmalab 80 Plus
Plasmalab System 100

Process Technology:
Reactive Ion Etch
Single wafer or batch loading
SiCl4 based chemistry for profile control
and excellent mask selectivity

Typical Results:
Etch rate: 10 - 200 nm/min
Uniformity: <+ 3% (2“ wafer)
Selectivity: > 10:1
Profile control: Vertical
Smooth etched sidewalls for
minimum scattering loss

Plasmalab System 100
with vacuum loadlock