with controlled ion bombardment

Inductive Coupled Remote Plasma

without ion bombardment

Technology:
Remote Downstream Plasma*
Source Power => Plasma Density
RF Power => Ion Energy
*original work by DSMW

Results:
Rate : 0.2 - 5 µm / min
Crystallographic etching without
ion bombardment
Increasing roughness with
increasing ion bombardment

Plasmalab 80 Plus
with cover for the ICP65

Plasmalab System 100:
(cluster with ICP and RIE)