At the TU Vienna the Plasmalab 80 Plus DP/ RIE Master/ Slave system is used for the anisotropic etching of GaAs and the deposition of Si₃N₄. The Chlorine based etcher is equipped with a Nitrogen glove box to prevent corrosion of the system when opening it to atmosphere.

with kind permission of:
TU Vienna
Institut für Festkoerperelektronik (Prof Gornik) Mr Schrenk / Dr  Smoliner/ Dr Unterrainer
 

PECVD

Plasmalab 80 Plus

RIE

Conformal SiN PECVD deposition

deposition rate: 10 - 20 nm/ min

uniformity   ± 2 %  (100 mm wafer)

conformal deposition

etch rate: 30  - 80 nm/ min

selectivity to photoresist the
mask > 50 : 1

5 µm deep anisotropic etch