Siemens uses an AMR with an Electron Cyclotron
Resonance Source (ECR) for Chlorine based
processes such as GaAs etching for HEMT's and
MESFET's. The Chlorine etcher is equipped with
a vacuum loadlock. The current process works
on the Plasmalab System 100. The ICP technology
has replaced the ECR technology in 1994 - 1997.
see ICP vs ECR

Plasmalab System 100
with ICP 380 source

ICP technology

The SEM shows a 3 µm deep etch (photoresist not removed).

rate: 50 nm/ min

selectivity to the Photoresist  Mask: 15 : 1

uniformity  < ± 5  %

with kind permission of:
  Siemens Munich ZFE
  Hr Schleicher