OPT application lab:
Vertical etched profile (with PR mask)

OPT application lab:
3 µm deep anisotropic etch with
- no "trenching"
- no "foot"

OPT application lab:
PR mask was taken off by Acetone

Technology:
ICP - RIE
Cl based process

PR mask hard baked

Results:
Etch rate > 0.25 µm/min (total)
Uniformity < ± 4 % on 2” wafer
Selectivity > 8:1 to PR mask (total)
Profile control: vertical > 80°

Inductive Coupled Remote Plasma

Plasmalab 80 Plus
with cover for the ICP65

Plasmalab System 100:
(cluster with ICP and RIE)