Laser Interferometry signal trace

Plasmalab System 100
dual chamber with
ICP etching and PECVD

Chlorine based Process
Rate : > 0.3 µm/min
Selectivity to SiO2 > 10:1, to resist > 5:1
good uniformity
anisotropic profile
smooth sidewalls
clean etch surface

Reactive Ion Etching with
Inductive Coupled Plasma Source (ICP)