|
80 µm deep etch |
Technology:
Reactive Ion Etching
with ICP Source (2 or 13 MHz)
Inductive Coupled Plasma
RF driven substrate electrode
Results:
Rate : 2.6 µm/ min
good uniformity
selectivity to PR > 12 : 1
selectivity to SiO2 mask 120 : 1
|
Dr Lamontagne uses his Plasmalab System 100
for processing of III-V semiconductors.
It is equipped with an ICP 180 source.
with kind permission of:
National Research Council, Ottawa
Institute for Microstructural Sciences
Dr Boris Lamontagne |
