OPT application lab:
7 µm deep GaSb etch

Plasmalab System 100
ICP180 source
cassette handling

Technology:
Reactive Ion Etching
with ICP Source (2 or 13 MHz)
Inductive Coupled Plasma
RF driven substrate electrode

Results:
Rate : 2 µm/ min
selectivity to SiO2 mask 25 : 1
good uniformity
smooth surface
anisotropic profile

ICP technology