precursor: TEMAH
TEMAH molecule
tetrakis ethylmethylamino hafnium
TEMAH is heated to 70° C and used in
"bubbling mode".
non metal precursor: NH3 or N2/ H2
dose control by fast pulse ALD valve
0.9 A/ cycle |
"OpAL" for
Atomic Layer Deposition based on the
Plasmalab 80 Plus
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Why remote plasma ALD ?
A "remote plasma" makes sure, the substrates
are NOT in contact with the plasma !
The remote plasma just cracks molecules,
so that very reactive species can be used for
the growth process.
Such reactive species often enable a very
efficient plasma preclean of the substrates,
lead to cleaner films and lower the deposition
temperature.
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