OPT application lab:
1.8 µm deep anisotropic
GaAs/ GaInP/ AlGaInP etch

Plasmalab System 100
with ICP180 source and loadlock

OPT application lab:
25µm deep GaP/ InGaAlP/ GaAs
etch at ca 2 µm/ min

Technology:
Reactive Ion Etching
with ICP Source
Inductive Coupled Plasma
Chlorine based Process
RF driven substrate electrode

Results:
rate : 0.3 - 0.8 µm/ min
up to 2 µm/ min for GaP/InGaAlP/GaAs depending on multilayer composition
selectivity to SiO2 mask ca 10 : 1
good uniformity
very anisotropic etch
smooth walls

OPT application lab:
20 µm deep GaP/ InGaAlP/ GaAs etch
target angle was 45°

Inductive Coupled
Plasma Etching