OPT application lab:
anisotropic InGaN/ GaN etch

dual chamber cluster: ICP / RIE

OPT application lab:
anisotropic InGaN/ GaN etch

Reactive Ion Etching

with ICP Source (13.56 MHz)
Inductive Coupled Plasma

13.56 MHz Plasma Excitation

Process chemistry: Cl based

RF driven substrate electrode

ICP schematic

Rate : 0.1 - 1 µm/ min

Selectivity to SiO2 mask > 5 : 1

Selectivity to Ni mask > 20 : 1

good uniformity: +/- 2.5 % (2“)

anisotropic profile

smooth etched sidewalls