OPT application lab:
10 µm deep anisotropic etch through
InP/ InGaAsP/ InP Heterostructure

ICP - RIE schematic

OPT application lab:
anisotropic etch with smooth walls

Chlorine based process: Cl2, CH4, H2, Ar

rate > 1.5 µ/ min

selectivity > 15:1 to SiO2 or SiNx mask

uniformity < +/- 4 % (50 mm diameter)

excellent profile control

Plasmalab System 100
with loadlock and ICP180 source

trace from complex multi-layer of InP related materials by laser interferometry

OPT application lab:
6 µm deep etch in InP/ InGaAsP

OPT application lab:
6 µm deep waveguide in InP/ InGaAsP

OPT application lab :
8 µm deep HBr based InP etch
with PR mask

Chlorine based process: Cl2, N2

rate > 1 µ/ min

selectivity > 10:1 to SiO2 or SiNx mask

uniformity < +/- 4 % (50 mm diameter)

excellent profile control

System 100 cassette cluster

HBr based process

rate > 0.85 µ/ min

selectivity to SiO2 mask > 10:1

selectivity to PR mask > 10 : 1

uniformity < +/- 4 % (50 mm diameter)

good profile control