Cl based processes

ICP - RIE with
Inductive Coupled Plasma Source

Rate 150 nm/ min

ICP technology

etch stopped at 90 %
of the total etch time

Selectivity controllable from
0.9 - 1.1 : 1

uniform process

smooth surface for low signal attenuation:
surface roughness < 10 nm (for ICP)

Plasmalab System 100
with ICP source

Parallel Plate Configuration
RIE-Mode (13.56 MHz)

Rate 50 nm/ min

RIE technology

Selectivity controllable from
1.5 to 2.5

uniform process

Plasmalab System 100
with vacuum loadlock