Dr Lamontagne uses his Ionfab 300 for CAIBE
processing of III-V semiconductors.
It is equipped with a filamentless 15 cm RF
source and a filamentless Plasma Bridge
Neutraliser (PBN).

The photo shows the Ionfab 300 Plus ,
which has replaced the Ionfab 300.

with kind permission of:
  National Research Council, Ottawa
  Institute for Microstructural Sciences
  Dr Boris Lamontagne

Ionfab 300 Plis

5 µm (max 15 µm) deep etch
at up to 30 : 1 selectivity
to the SiO₂ mask
aspect ratio up to 10 : 1

chemically assisted ion beam etching

applications:
wavelength demultiplexer,
low loss single- and multi- mode
turning mirrors (0.3 dB per mirror)

turning mirror etched
in InP by CAIBE