high aspect ratio InP etch
room temperature CH4 / Cl2 process
depth 4 micron, diameter 0.56 micron
etch rate 0.5 micron/ min
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ICP schematic |
anisotropic mask definition
(RIE of SiN on a Plasmalab 80 Plus,
SiN deposited by PECVD
on a Plasmalab 80 Plus)
Waveguide and Resonator |
Reactive Ion Etching
with ICP Source (13.56 MHz)
Inductive Coupled Plasma
13.56 MHz Plasma Excitation
RF driven substrate electrode
good uniformity: +/- 2.5 % (2“)
anisotropic profile
smooth etched sidewalls
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with kind permission of
P Strasser, R Wuest, Dr F Robin
Communication Photonics Group
ETH Zurich, Switzerland
www.photonics.ee.ethz.ch
fabricated in
FIRST Lab (Dr O Homan, Dr E Gini)
ETH Zurich, Switzerland
www.first.ethz.ch
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