Plasmalab 80 Plus |
OPT application lab:
7 µm deep InP etch |
Technology:
Parallel Plate Reactor
Shower Head Gas Inlet
13.56 MHz Plasma Excitation
Process:
CH4 / H2 based at room temperature
( CH4 / H2 / Cl2 based at ca. 200 °C can
be used at 100 - 200 nm/ min.)
Rates :
InP 30 - 60 nm/ min
InGaAs 20-40 nm/ min
GaAs 10-20 nm/ min
uniformity ±3% across 2” wafer
±5%
across table
profile > 85º
surface roughness < 3 nm RMS
mask selectivities:
InP:SiO2 >15:1
InP:SiNx >15:1
InP:resist > 5:1 |
