OPT Application lab:
Cl2/N2 ICP etch
at 0.25 µm/ min
selectivity to SiO2 > 10 : 1
wall angle > 85°
|
surface roughness < 5nm
low etch rate (~100nm/min) possible
The SEMs show the etch profiles at different
temperatures. The Ni mask is not removed.
with kind permission of
Dr Topaloglu, Prof Tegude
University Duisburg-Essen
Solid State Electronics Department (HLT) |
InP etch rate vs
substrate electrode temperature
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