OPT application lab:
4 µm deep LiNbO3 etch at > 50 nm/ min
with smooth walls (roughness < 10 nm)
PR mask not removed,
selectivity > 1.2 : 1
The process was optimised for smooth sidewalls
and avoiding redeposition resulting in "ears" or "fencing".
Some bottom roughness was acceptable in this case.
courtesy of Uni Bristol
Prof Siyuan Yu
1 µm deep ICP etch of
PE (proton exchanged) LiNbO3
SF6/O2 process at 200 nm/ min with NiCr mask
|
OPT application lab:
4 µm deep LiNbO3 etch at > 40 nm/ min
with smooth walls (roughness < 10 nm)
(Ni mask not removed,
selectivity > 4: 1)
|
Plasmalab System 100
with ICP source and vacuum loadlock
ICP - RIE technology
Higher rates and more anisotropic etching
can be achieved after a PE treating:
proton exchange using a dense H plasma in the ICP etcher |
