OPT application lab: 3.4 µm deep LiTaO3 etch (PR mask)
Plasmalab System 100 with loadlock and ICP380 source
ICP technology
Piezoelectric devices and SAWs (Surface Accoustic Waves)
Process F based
Etch rate >25 nm/min Selectivity > 5:1 to Cr mask, > 0.5:1 to PR mask Uniformity <± 4% (2” wafer) Profile 60-70°
