µc Si can be deposited by:


parallel plate PECVD
(13 MHz/ 81 MHz)

µc Si can also be deposited by
"remote plasma" PECVD.

The "remote" plasma only
cracks the molecules in a region
"remote" from the substrate

System 100 Pro
cluster:
a - Si and µc - Si PECVD
TCO Sputtering
Al2O3 ALD

Plasmalab System 100

Equipment:
Plasmalab 80 Plus/ 800 Plus
Plasmalab System 100/ 133

Technology:
Parallel Plate Reactor
13 and/ or 81 MHz
Shower Head Gas inlet
SiH₄ based process
(PH₃ , B₂H₆ for doping)

phosphorous doped µc-Si:H layers:
Dark conductivity > 2 S/cm
Depositon rate > 4 nm/min
Thickness uniformity: <± 3-4 %
Photo conductivity uniformity < ±10%

boron doped µc-Si:H layers:
Dark conductivity > 0.1 S/cm
Deposition rate > 4 nm/min
Photo conductivity uniformity < ±10%