31 nm wide lines etched in Si
HBr based process
highly anisotropic profile
neglegible trenching
etch mask: HSQ
selectivity Si : HSQ 4 : 1
r ate : 20 nm/ min
up 450 nm deep
27 nm wide lines etched in Si
450 nm deep
with kind permission
AMO Aachen, Mr Moormann, Dr Lemme
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80 nm wide lines in Si
room temperature ICP process: SF6/ C4F8
rate 8 nm/min
selectivity to Ni mask > 30 : 1
uniformity < 3% over 100 mm
2 µm diameter holes in Si
room temperature ICP process: SF6/ C4F8
rate 15 nm/min
with kind permission
Josef Kouba, BESSY AZM |
