Ionfab 300 Plus with vacuum loadlock
0.3 µm deep Ni etchPR mask not removed
Technology: Ion Beam Etching IBE 15 cm RF ion source for 4" wafer 30cm RF ion source for 6", 8" wafer filamentless PBN Helium backside cooling
Ni etch rate with PR mask ca 40 nm/ min uniformity +/- 4 % wall angle 85°
