System 100
with cassette handling and 2 ICP modules

PDMS etch : Depth 90µm, Profile 92° (controllable)
(Contamination due breaking the sample for analysis)

Equipment:
Plasmalab System 100/ 133
Plasmalab 80 Plus

Technology:
Reactive Ion Etching
Inductive Coupled Plasma Source
He backside cooling

Results:
Etch rate: 1.2µm/min
Selectivity Cu mask: > 50:1
Uniformity: ±3.5% across 200mm wafer
Profile: 89-95° controllable
higher temperature lead to a re-entrant profile.

ICP RIE schematic