Plasma Technology  


OPT application lab: rate: 15 x RIE mode

< 5 minutes to expose 4 metal layers
no metal erosion at the first metal layer
DC bias only ~130V



The plasma is concentrated
above the die to be etched.

PlasmaPro NGP 80
with ICP source and
laser interferometer


OPT application lab:
rate: 8 x ICP mode

< 5 minutes for exposing
at least 4 metal layers
no metal erosion or metal lifting
DC bias only ~80V


Plasma accelerator for failure analysis die etching

Reactive Ion Etching



The plasma concentrator is available for a
wide range of packaged devices.

It can be taken out for processing wafers
in RIE or ICP mode.



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