polySi etch with PR mask intact
26 nm lines etched in polySi at 50 nm/ min with very high selectivity to gate oxide etch mask: HSQ
3 step process: oxide breakthrough anisotropic polySi etch highly selective overetch
Courtesy of AMO Aachen Microelectronic Engineering, Vol 79-79, pp. 212-217, 2005 "Highly selective etch process for silicon-on insulator nano-devices”
Plasmalab System 100with ICP source and vacuum loadlock
ICP - RIE technology
Equipment: Plasmalab System 100/ 133 Technology: Reactive Ion Etching Inductive Coupled Plasma Source HBr based process He backside cooling Results: Rate : > 120 nm/min Uniformity: < + 4 % anisotropic etch excellent linewidth control selectivity to resist > 3 : 1 selectivity to SiO2 > 200 : 1
