OPT application lab:
8 m deep, anisotropic Polyimide Etch
using a silylated PR mask

ICP technology

Plasmalab System 100
with ICP 180 source

OPT application lab:
high rate 50 µm deep etch

laser interferometer for
in situ depth measurement

Technology:

Reactive Ion Etching (RIE)
Inductive Coupled Plasma (ICP) Source
13 MHz driven substrate holder
He cooling

Results:

Rate : > 1.5 µm/ min
3 µm/ min with some undercut
Mask: Ti, Al, Cr, W or SiOxNy
Uniformity: +/- 3% (100 mm wafer)
Profile: anisotropic (89 - 90°)
Selectivity to Si based PR > 30 : 1
to Ti > 30 : 1

OPT application lab:
2 - 10 µm deep, anisotropic Polyimide Etches