OPT application lab:
100 nm lines and spaces 

Reactive Ion Etching
with ICP source

Plasmalab System 100
with loadlock and ICP180 source

ICP sources
ICP 65 for pieces and small wafer
ICP 180 for up to 4" wafers
ICP 380 for up to 8" wafers

Results: Rate : 160 nm/ min
selectivity to the Ti mask > 100 : 1
anisotropic profile
uniformity < +/- 3 % (6")

Equipment:
Plasmalab 80 Plus
Plasmalab System 100
Plasmalab System 133

Technology:
Reactive Ion Etching
with ICP Source (13.56 MHz)
Inductive Coupled Plasma
RF driven substrate electrode
substrate temperature control