 |
Technology:
- Inductive Coupled Plasma-
Reactive Ion Etching
- Independent control of ion energy
and ion current density
- Very efficient substrate cooling
Results:
Rate : ca. 150 nm/min
Uniformity: + 4% (150 mm wafer)
Profile: anisotropic
|
Equipment:
Plasmalab 80 Plus
Plasmalab System 100/ 133
etched at OPT application lab,
Yatton/ UK |
