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Technology:
Etch Mode: IBE
Rotating substrate with adjustable tilt
Ion source: 15 cm, 13.56 MHz driven
Ion Optics: High Uniformity
Neutralisation: filamentfree PBN
Results:
Rate : 30 nm/min (no He-cooling)
Mask: Photoresist
Selectivity: 1.5 - 2.5:1
No ‘trenching“, no ’redeposition‘
Wall Angle: adjustable 30° - 85°
Uniformity: + 5% (100 mm) |
